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IRFW624B Datasheet, Fairchild Semiconductor

IRFW624B mosfet equivalent, n-channel mosfet.

IRFW624B Avg. rating / M : 1.0 rating-11

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IRFW624B Datasheet

Features and benefits


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* 4.1A, 250V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 13.5 nC) Low Crss ( typical 9.5 pF) Fast switching 100% avalanche tes.

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching per.

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IRFW624B Page 1 IRFW624B Page 2 IRFW624B Page 3

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